9月16日上午，由北京大学集成电路学院、集成电路学院高精尖创新中心、北京大学国家集成电路产教融合创新平台、集成电路科学与未来技术北京实验室、后摩尔时代微纳电子学科创新引智基地及北京大学校友会半导体分会联合主办的“未名·芯”论坛系列讲座第六十四期在微纳电子大厦103报告厅成功举办。本期邀请德国德累斯顿纳米电子材料实验室（NaMLab）的副科学总监 Uwe Schroeder带来题为“Doped HfO2-based ferroelectrics - Trends and Challenges”的精彩讲座。讲座由北京大学集成电路学院唐克超研究员主持。
铁电存储器技术凭借其高速、低功耗和非易失性等优势，被认为是未来存储技术的重要发展方向之一。在众多候选材料中，氧化铪基铁电材料因其与主流半导体CMOS工艺高度兼容，并且在纳米尺度下仍能保持稳定的铁电特性，展现出卓越的微缩潜力和3D集成可行性，因而成为当前学界和工业界关注的焦点之一。Uwe Schroeder博士聚焦于铁电氧化铪材料的性能研究及其在未来器件中的集成探索，致力于解决该材料从实验室走向产业化应用的关键挑战。
讲座中，Uwe Schroeder博士首先回顾了2006年首次发现掺杂HfO2的铁电性这一里程碑式的突破，这一发现为铁电存储器件的材料选择提供了一个CMOS工艺兼容的完美替代方案，改变了铁电存储领域的研究格局。随后，Uwe Schroeder博士从铁电性的关键影响因素讲起，深入剖析了薄膜中的应力机制，详细讲解了多种因素如何在工艺过程中对薄膜施加应力，而这些应力又是如何影响铁电相的形成过程，同时，材料的相分布反过来会在器件的循环工作过程中影响内部应力状态，揭示了两者之间复杂的相互作用关系。紧接着，Uwe Schroeder博士系统介绍了基于氧化铪的三种存储器件——FeRAM、FTJ和FeFET，阐述了它们各自的工作原理、发展趋势以及当前面临的技术挑战。最后，Uwe Schroeder博士还展示了基于铁电器件的新型应用探索，尤其是在实现高能效神经形态计算领域所展现出的潜力，为在场师生描绘了氧化铪基铁电器件未来的广阔应用前景。
在最后的交流环节，师生们踊跃提问。大家围绕铁电存储器的未来发展和技术瓶颈与Schroeder博士展开了深入的讨论。Schroeder博士耐心解答了大家的问题，并分享了自己对行业前景的独到见解，其精彩的分享让在场师生获益匪浅。
个人简介：
Uwe Schroeder has been the Deputy Scientific Director at the Nanoelectronic Materials Laboratory (NaMLab) in Dresden since he joined the company in 2009. His research focuses on the material properties of ferroelectric hafnium oxide and its integration into future devices. He is primarily involved in process integration, device characterization, and reliability improvement. Previously, he worked at the Infineon/Qimonda DRAM Development Center in Fishkill, New York and Dresden, Germany, since 1997. There, he developed high-k dielectrics for integration into DRAM capacitors. During this time, the previously unknown ferroelectric properties of doped HfO2-based dielectrics were discovered in 2006. Uwe Schroeder received his Ph.D. from the University of Bonn, Germany, including a research stay at UC California, Berkeley, and worked as a postdoctoral researcher at the University of Chicago.He is (co-)author of more than 580 papers and conference contributions and more than 30 patents, including more than 250 peer-reviewed publications, 75 invited presentations on ferroelectric HfO2, material properties and devices based thereon. He has co-edited two editions of a book on ferroelectric HfO2, was on the editorial board of lEEE Electron Devices Letters, and is a member of several lEEE and AVS technical program committees. Dr. Schroeder is the 2019 recipient of the FMA international Award for Ferroelectric Materials and Their Applications.
