11月7日下午，由北京大学集成电路学院、集成电路学院高精尖创新中心、北京大学国家集成电路产教融合创新平台、集成电路科学与未来技术北京实验室、“111”计划、北京大学校友会半导体分会和北京大学人工智能研究院联合主办的“未名·芯”论坛系列讲座第六十七期，在微纳电子大厦103报告厅成功举办。本期讲座特邀新加坡国立大学（NUS）的Prof. Mario Lanza带来题为“Memristive materials and devices for post-Moore electronics”的精彩报告。讲座由北京大学集成电路学院贺明研究员和北京大学人工智能研究院陶耀宇研究员共同主持。
忆阻器凭借其可调电阻特性和非易失性，被视为突破传统Flash、DRAM和SRAM在密度与能耗方面瓶颈的潜在核心器件。在报告中，Lanza 教授系统阐述了忆阻器在后摩尔时代的广阔应用前景及当前面临的发展挑战，他特别指出，当前忆阻器研究中普遍存在测试方法不规范等问题，并提出了相应的改进方案，对相关科研工作具有重要指导意义。他总结了该领域面临的主要技术挑战，包括提升器件耐久性与稳定性、降低工作电压与电流、发展适用于类脑计算的多级忆阻器、完善外围电路设计以及提高后端工艺（BEOL）集成密度。
Lanza教授分享了基于剥离 hexagonal boron nitride（h-BN）的二维忆阻器成果。通过机械剥离与光刻转移等工艺步骤，实现了器件性能的高度稳定与极高的制备良率，为高可靠性、可集成的二维忆阻器阵列提供了关键实验支撑。Lanza教授还介绍了其团队最新提出的神经突触型随机存取存储器（NS-RAM），该器件具备近乎100%的良率和优异的可靠性，与CMOS工艺高度兼容，为高能效类脑计算硬件的发展提供了新思路。
忆阻器在人工智能与类脑计算领域展现出显著的能效优势，能够实现高密度、低功耗的计算架构。展望未来，Lanza教授认为忆阻器研究将聚焦于片上集成、小尺寸器件设计以及多层h-BN材料的应用，其优异的离子迁移约束能力与可编程特性，将有力推动存算一体与神经形态计算的进一步发展。
讲座现场气氛热烈，师生积极参与互动，讨论对Lanza教授研究内容的思考。Lanza教授就忆阻器的工作原理及相关机制等问题，与在场师生进行了深入交流与探讨，并对忆阻器的未来发展前景提出了独到见解，为师生带来了深刻的启发。
个人简介：Dr. Mario Lanza is an Associate Professor of Materials Science and Engineering at the National University of Singapore, since August 2024. He got the PhD in Electronic Engineering in 2010 at the Autonomous University of Barcelona, where he won the extraordinary PhD prize. In 2010-2011 he was NSFC postdoctoral fellow at Peking University, and in 2012-2013 he was Marie Curie postdoctoral fellow at Stanford University. On September 2013 he joined Soochow University (in China), where he promoted until the rank of Full Professor. Between October 2020 and July 2024, he was full-time Associate Professor at the King Abdullah University of Science and Technology (in Saudi Arabia), where he became known for his work in the field of nano-electronics. He has published over 250 research articles in top journals like Nature (3), Science (2), and Nature Electronics (8), many of them becoming highly cited. He has been plenary, keynote, tutorial and invited speaker in over 150 conferences, and he and his students have received some of the most prestigious awards in the world (like the IEEE Fellow). He has been often consulted by leading semiconductor companies and publishers. He is an active member of the board governors of the IEEE - Electron Devices Society, and has been involved in the technical and management committee of top conferences in the field of electron devices, including IEDM, IRPS and IPFA. He speaks fluently five languages: English, Chinese, German, Spanish and Catalan.
