Optimization of photoresist development and DRIE processes to fabricate high aspect ratio Si structure in 5 nm scale, J.M.M. 2019
Hard mask free DRIE of crystalline Si nanobarrel with 6.7nm wall thickness and 50:1 aspect ratio, IEEE MEMS 2015 (Best Paper Final List Award)
国际专利1项，国内专利2项
负责基金项目3项；技术负责NSFC重大研究计划1项，重点研发计划1项
