Wang，Maojun-School Of Integrated Circuits

Faculty

Home - Faculty - Faculty - Department of Micro/Nanoelectronics - Wang，Maojun

Faculty

Name： Wang，Maojun
Academic Title： Professor
Tel： 86-10-62750419
Email： mjwang@pku.edu.cn
Research Interests： Wide band gap semiconductors

Educational Experience

2002.9 ~ 2007.6 Peking University, PhD in physics, semiconductor optoelectronics

1998.9 ~ 2002.7 Nanjing University, Bachelor of Science in department for intensive instruction

Work Experience

2021.7 ~ now School of Integrated Circuits, Peking University, Associate Professor

2013.8 ~ 2021.7 The Institute of Microelectronics, Peking University, Associate Professor

2011.9 ~ 2013.8 The Institute of Microelectronics, Peking University, Assistant Professor

2010.9 ~ 2011.3 Department of Electronic and Computer Engineering, HKUST , Postdoctoral Research Associate

2010.1 ~ 2010.7 Research and Development Department of Wide Band Gap Semiconductors, Nanjing Institute of Electron Devices, Senior Engineer

2007.8 ~ 2009.12 Department of electronic and computer engineering, HKUST, Postdoctoral Research Associate

Personal Profile

Dr. Wang received the B.S. degree from the Department of Intensive Instruction, Nanjing University, Nanjing, China, and the Ph.D. degree from the School of Physics, Peking University, Beijing, China, in 2002 and 2007, respectively. He joined the Institute of Microelectronics and now School of Integrated Circuits, Peking University, in 2011, where he is currently an Associate Professor. His research area including the properties of GaN-based materials and the device physics of GaN based high electron mobility transistors (HEMTs). From Aug. 2007 to Dec. 2009, he was a postdoctoral research associate in HKUST, where he carried out detailed investigation on the physical properties of fluorineions in enhancement mode (E-Mode) AlGaN/GaN HEMT fabricated by fluorine-plasma treatment, the breakdown mechanisms and the improvement of breakdown voltage in AlGaN/GaN HEMT. Currently, he is working on the GaN device technology and characterization for power switch applications, focusing on the realizing of high performance GaN E-mode devices with high threshold voltage, high off-state breakdown voltage, high channel mobility and low dynamic on-resistance. Meanwhile, he is also interested in vertical GaN power devices on silicon and freestanding substrates.

Others

Please contact me if you are interested in wide band gap semiconductor materials, devices and circuits by mjwang@pku.edu.cn