Kang，Jinfeng-School Of Integrated Circuits

Faculty

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Faculty

Name： Kang，Jinfeng
Academic Title： Professor
Tel： Tel: +86-10-62756745; Mobile: +8613911076986
Email： kangjf@pku.edu.cn
Research Interests： Nano devices and materials (oxide-based resistive switching, ferroelectric, and spintronic) for computing and data storage, Oxide film technology Innovative solutions to semiconductor technologies, Brain-inspired computing system.

Educational Experience

B.S. 09/1980-07/1984 Dept. of Physics, Dalian University of Technology, Dalian, China.

M.S. 09/1989-07/1992 Dept. of Computer Science and Technology, Peking University, China

Ph.D. 09/1992-01/1996 Dept. of Computer Science and Technology, Peking University, China

Work Experience

07/2022– present, Professor, School of Integrated Circuits, Peking University

11/2003 – 06/2022, Professor, School of EECS, Peking University

11/2002—10/2003, Visiting Professor, SNDL, National University of Singapore

09/2001 – 10/2002, Professor, IME, Peking University

12/1997 - 08/2001, Assoc. Professor, IME, Peking University

01/1996 -- 12/1997, Post-Doctor Fellow, IME, Peking University

09/1992 -- 12/1995, Research Assistant, Department of Computer Science and Technology, Peking University

Personal Profile

Jinfeng Kang is a Full Professor of Integrated Circuits School, Peking University. His research focuses on the nano devices and materials for computing and data storage, including oxide-based resistive switching/ferroelectric/spintronic devices; oxide film technology Innovative solutions to semiconductor technologies; brain-inspired computing devices and systems applications. He has the contributions on the physical mechanisms of resistive switching and ferroelectricity of HfO₂-based thin films & modeling and simulation on the critical device behaviors of oxide-based ReRAM and ferroelectric devices, technical solutions on the materials and structures of ReRAM, high density.

He ever worked on the integration and behavior of high-k/metal gate stack and the simulation of scaled MOSFETs with high-K gate dielectrics. Having contributions on the innovation of the thermally robust HfN/HfO₂ gate stack for advanced CMOS devices, the fabrication and application of novel oxide films such as high Tc superconducting, colossal magnetoresistance(CMR) and conducting