He is a Peking University Boya Young Fellow. His research interests include high-performance ultra-thin body CMOS electronics, stacked nanosheet devices with low-dimensional semiconductor channel, stacked complementary FET (CFET) and BEOL integration technologies. The research papers have been published in IEEE IEDM, Nature Electronics, Advanced Materials, Advanced Functional Materials, IEEE Electron Device Letters and other professional journals and conferences.
1. Xiong Xiong et al., Top-Gate CVD WSe2 pFETs with Record-High Id~594 μA/μm, Gm~244 μS/μm and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration, IEDM 20.6.1-20.6.4 (2022)
2. Xiong Xiong et al., Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 μA/μm and MoS2/WSe2 CFET. IEDM 7.5.1-7.5.4 (2021)
3. Xiong Xiong et al., A transverse tunnelling field-effect transistor made from a van der Waals heterostructure. Nature Electronics 3 (2), 106-112 (2020)
4. Xiong Xiong et al., Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide transistors. Advanced Materials 34, 2106321 (2021)
5. Xiong Xiong et al., Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures. Advanced Functional Materials 30: 1909645 (2020)
