My research primarily focuses on advancing the field of energy efficient logic and memory devices through innovative principles and methodologies. A significant emphasis is placed on the development of multi-scale, multi-physics modeling and simulation techniques to provide comprehensive insights into device behavior across various physical domains and scales. This approach enables a deeper understanding of the interplay between material properties, device architectures, and operational dynamics.
Additionally, the research explores design and technology co-optimization (DTCO) strategies that integrate advanced node design processes, bridging the gap between device performance, manufacturing constraints, and system-level requirements. This holistic approach ensures that cutting-edge device technologies are seamlessly integrated into modern semiconductor ecosystems.
Furthermore, my work delves into pioneering new computing paradigms, such as neuromorphic computing, quantum-inspired architectures, and beyond-CMOS technologies, which hold the potential to redefine computational efficiency and scalability in the era of data-intensive applications. Through these efforts, the research contributes to both the theoretical foundations and practical advancements needed to address the challenges of next-generation electronics.
Recent selective publications:
1. Hang Zhou, Xiping Dong, Raphael Prentki, Ronggen Cao, Jian Wang, Hong Guo, and Fei Liu*, “Quantum transport simulations of sub-60 mV/decade switching of silicon cold source transistors,” IEEE Trans. Electron Devices, 71, 4 2781 (2024).
2. Ligong Zhang, Guanwen Yao, Xiaoyan Liu, and Fei Liu*, “Three-dimensional cold metals in realizing steep-slope transistors based on monolayer MoS2,” IEEE Electron Device Lett., 44,1764 (2023).
3. Gyuho Myeong, Wongil Shin, Kyunghwan Sung, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, Jihoon Park, Michael S. Fuhrer, Kenji Watanabe, Takashi Taniguchi, Fei Liu*, Sungjae Cho*, “Dirac-source diode with sub-unity ideality factor,” Nature Communications, 13, 4328 (2022).
4. Ligong Zhang, Yuchen Wang, Xiaoyan Liu, and Fei Liu*, "Electrical switching of spin polarized current in multiferroic tunneling junctions," npj Computational Materials 8, 197 (2022).
5. Zhijiang Wang, Xiaoxin Xie, Lizong Zhang, Rongen Cao, Xiaoyan Liu, Sungjae Cho*, and Fei Liu*, "Cold-source diode with sub-unity ideality factor and giant negative differential resistance," IEEE Electron Device Lett., 43, 2184-2187 (2022).
6. Fei Liu*, “Switching at less than 60 mV/decade with a “cold” metal as the injection source,” Physical Review Applied, 13, 064037 (2020).
7. Fei Liu*, Chenguang Qiu, Zhiyong Zhang, Lian-Mao Peng, Jian Wang, Zhenhua Wu, and Hong Guo*, “First principles simulation of energy efficient switching by source density of states engineering,” IEEE 2018 International Electron Devices Meeting (IEDM), 763, (2018).
8. Fei Liu*, Chenguang Qiu, Zhiyong Zhang, Lian-Mao Peng, Jian Wang, and Hong Guo, “Dirac electrons at the source: breaking the 60 mV/decade switching limit,” IEEE Transactions on Electron Devices, 65, 2736 (2018).
9. Chenguang Qiu, Fei Liu, Lin Xu, Bing Deng, Mengmeng Xiao, Jia Si, Li Lin, Zhiyong Zhang*, Jian Wang, Hong Guo, Hailin Peng, and Lian-Mao Peng*, “Dirac source field-effect transistors as energy-efficient and high-performance electronic switches,” Science, 361, 387 (2018).
10. Qingjun Tong, Fei Liu, Jiang Xiao, and Wang Yao*,“Skyrmions in the Moire of van der Waals 2D Magnets,”Nano Letters,18, 7194-7199 (2018).
