The research interest includes silicon radiation detector technology and semiconductor process TCAD technology. The main research content is silicon PIN structure detector with low leakage current, high breakdown voltage, high sensitivity; models and simulation algorithms for ion implantation, high temperature annealing and deep etching for semiconductor materials such as silicon and SiC; new material semiconductor devices and anti-irradiation properties. He has presided over and participated in a number of scientific research projects such as the National Natural Science Foundation of China, national major projects, and 973, and has published more than 20 papers in academic journals, more than 40 papers in academic conferences, and obtained 10 invention patents. He won the Beijing Science and Technology Award in 2008, the first prize in the category of technological invention, the first prize for science and technology progress award from the Ministry of Education in 2009 and 2016, and the second prize for National Award for Technological Invention in 2018.
