Dr. Tang's research focuses on ferroelectric memory devices and novel sensing devices based on transition metal oxides. Within this field, his study includes mechanisms and modulation of materials, design and optimization of semiconductor devices, and novel applications in integrated circuits. Dr. Tang published more than 70 research articles in journals and conferences including Science, Science Advances, Advanced Materials, Nano Letters, IEEE IEDM, with more than 4400 citations and an h-index of 29. He is the head scientist of research projected funded by National Key Research and Development Program of China, and National Natural Science Foundation of China. He served as TPC members for VLSI-TSA and CSTIC, and reviews articles for Joule, ACS Nano, IEEE EDL and APL etc.
Research Interests:
I. Hafnium oxide based ferroelectric materials and devices
Ferroelectric memories based on hafnium oxide(HfO2) are promising for applications in next-generation integrated circuit, due the advantages of ultra-low power consumption, good scalability, high speed, and non-volatility. Our research is centered on HfO2-based ferroelectric field-effect transistor (FeFET). By investigating the physical mechanism in ferroelectric materials and devices, we aim to solve the key challenge associated with the FeFET device, and discovers innovative application in integrated circuit. The research focus of this direction includes:
· Study of ferroelectric materials mechanisms based on novel fabrication and characterization techniques
FeFETs optimzation for high endurance and high memory density
· Device-Array-Circuit co-optimization for novel computing architecture
II. Novel device and architecture based on phase change oxide
The metal-insulator phase transition of vanadium dioxide(VO2) displays rich physical characteristics and multi-field coupling, greatly empowering the intelligent control of mechanical, optical, electrical and thermal properties. Therefore, VO2 has extensive applications in advanced memory, neuromorphic computing, sensor and thermal management. Our group focuses on infrared sensor based on VO2, and by combining with ferroelectric devices, we explore new device and in-sensor processing architectures. The research focus of this direction includes:
· Novel devices based on coupling of ferroelectrics and phase change materials
· Design of high-performance infrared sensor and in-sensor computing
