1） Han J., Sun L., Xu H., Zhang Y., Zhang S., and Wang Y., Impact of gate coupling and misalignment on performance of double-gate organic thin film transistors. Japanese Journal of Applied Physics, 2015. 54(4): 04dk04.
2) Zhang Y.-B., Sun L., Xu H., Han J.-W., Wang Y., and Zhang S.-D., Comparative study of silicon nanowire transistors with triangular- shaped cross sections. Japanese Journal of Applied Physics, 2015. 54(4): 04dn01.
3) Zhang Y.B., Sun L., Xu H., and Han J.W., Simulation and comparative study of tunneling field effect transistors with dopant-segregated Schottky source/drain. Japanese Journal of Applied Physics, 2016. 55(4): 04ed09.
4) Liu L.-K., Shi C., Zhang Y.-B., and Sun L., Perspective analysis of tri-gate germanium tunneling field-effect transistor with dopant segregation region at source/drain. Japanese Journal of Applied Physics, 2017. 56(4): 04cd18.
5) Liu L.-K., Shi C., Wang G.-Q., Wang Y., and Sun L., Comparative surfacing studies of sputtered and thermal
annealed ZnO films wet etched with NH4Cl and acidic etchants. Surface & Coatings Technology, 2017. 331:
85-89.
