长期从事“新材料设计制备-先进器件工艺-微纳集成系统”全链条研究，聚焦新原理信息材料与器件，围绕多感觉融合智能器件、感知神经网络算法、可重构感存算集成等方向开展研究，已在 Nature Communications、IEEE IEDM 、 IEEE EDTM 、 IEEE Electron Device Letters 等发表论文40余篇，9篇封面，总被引用4100余次， h 因子24；受邀在中国计算机学会芯片大会、IEEE固态和集成电路国际会议、中国半导体技术大会等做邀请报告多次；编著学术专著1部，参与编写学术专著2章节。目前担任SCI期刊 Energy & Environmental Materials 副主编，IEEE EDTM、IEEE ICSICT和IEEE VLSI-TSA等国际会议技术程序委员会委员。2017年入选国家级青年人才，2023年入选国家级领军人才，同年入选北京市人才。
代表论文
[1] Chunyan Zhao, Xilin Lai, Dawei Liu, Xinrui Guo, Jiamin Tian, Zuoyuan Dong, Shaochuan Luo, Dongshan Zhou, Lang Jiang*, Ru Huang, and Ming He*, "Molecular-Dipole Oriented Universal Growth of Conjugated Polymers into Semiconducting Single-Crystal Thin Films", Nature Communications , 2025, 16 , 1509.
[2] Lei Xu, Junling Liu, Shuo Liu, Xilin Lai, Xinrui Guo, Jingyue Wang, Mengshi Yu, Hailin Peng, Xinran Wang, Ru Huang, and Ming He*, "Ultrasensitive Dim-Light Neuromorphic Vision Sensing via Momentum-Conserved Reconfigurable van der Waals Heterostructure", Nature Communications , 2024 , 15 , 9011. (Editors’ Highlights)
[3] Shuo Liu, Lixia Han, Zhiyuan Wu, Lei Xu, Xinrui Guo, Junling Liu, Yu Zhu, Peng Huang, Linxiao Shen*, Ming He*, and Ru Huang, "Achieving Over 2800% Superadditive Visual-Audio Multisensory Integration in-situ Ferroelectric-Semiconducting Transistor for Fuzzy Subject Detection", 2024 IEEE International Electron Devices Meeting (IEDM) , San Francisco, CA, USA, 2024, pp. 27.6.1-27.6.4.
[4] Lei Xu, Junling Liu, Shuo Liu, Liangliang Zhang, Ming He*, and Ru Huang*, “Ultrasensitive Retinomorphic Dim-Light Vision with In-Sensor Convolutional Processing Based on Reconfigurable Perovskite-Bi2O2Se Heterotransistors”, 2023 IEEE International Electron Devices Meeting (IEDM) , San Francisco, CA, USA, 2023, pp. 33.3.1-33.3.4.
[5] Qifeng Cai, Shuo Liu, Minzhi Du, Lei Xu, Chunyan Zhao, Congwei Tan, Teng Tu, Kun Zhang, Hailin Peng, Xing Zhang, Ming Li*, Ming He*, and Ru Huang, “Sub-10mK-Resolution Thermal-Bolometric Integrated FET-Type Sensors Based on Layered Bi2O2Se Semiconductor Nanosheets”, 2020 IEEE International Electron Devices Meeting (IEDM) , San Francisco, CA, USA, 2020, pp. 26.1.1-26.1.4.
