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2. Mengjun Li, Jinyan Wang, Bin Zhang, Qianqian Tao, Hongyue Wang, Qirui Cao, Chengyu Huang, Jianghui Mo, Wengang Wu, Shujun Cai, Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique, Solid-State Electronics, Volume 177, March 2021, 107927
3. Cao, Qirui, Wang, Jinyan, Li, Mengjun, Wang, Hongyue, Tao, Qianqian, Zhang, Bin and Wu, Wengang, Study on the charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure, Applied Physics Letters, Vol. 115, No. 15, pp. 152105, 2019
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5. Hongyue Wang, Jinyan Wang, Mengjun Li, Qirui Cao, Min Yu, Yandong He, Wengang Wu, 823 mA/mm drain current density and 945 MW/cm2 Baliga's figure of merit enhancement-mode GaN MISFETs with a novel PEALD-AlN/LPCVD-Si3N4 dual gate dielectric, IEEE Electron Device Letters, Vol. 39, No. 12 , 1888 - 1891, Dec. 2018
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15. Zhe Xu, Jinyan Wang, Yong Cai, Jingqian Liu, Zhen Yang, Xiaoping Li, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, and Yue Hao, High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT, IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 1, JANUARY 2014, pp.33
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