主要从事新原理低功耗逻辑与存储器件研究，发展多尺度多物理模型模拟方法，开展设计工艺协同优化研究，并探索新型计算范式。近期主要工作：
1.Zhijiang Wang, Xiaoyan Liu, and Fei Liu*, Enhancing the Switching Ratio of HZO FTJs by Co-Optimizing Work Function and Defect Density, IEEE Electron Device Letters, early access (2026).
2.Weican Chen, Chenhao Xia, Guanwen Yao, Haoxuan Wang, Yuxiang Zhang, Yunyi Fu and Fei Liu*, EHPC: Efficient Heterogeneous Probabilistic Computing Architecture for Combinatorial Optimization Acceleration, ACM/IEEE Design Automation Conference (DAC) (2026)
3.Chenhao Xia, Haoxuan Wang, Weican Chen, Guanwen Yao, Yuze Lu, Hongjie Zeng, Lei Sun, Dedong Han, Xiaoyan Liu, Yunyi Fu, and Fei Liu*, Achieving in-situ Optical Perception Probabilistic Computing with Optoelectronic IGZO TFTs, IEEE 2025 International Electron Devices Meeting (IEDM) (2025).
4.Guanwen Yao, Ming Yu, Xiaoyan Liu, Jinfeng Kang, and Fei Liu*, Design Mott Multiferroic HfO2 by inducing unpaired d states, Nano Letters, 25, 32,12261-12268 (2025).
5.Hang Zhou, Xiping Dong, Raphael Prentki, Ronggen Cao, Jian Wang, Hong Guo, and Fei Liu*, “Quantum transport simulations of sub-60 mV/decade switching of silicon cold source transistors,” IEEE Transactions on Electron Devices, 71, 4 2781 (2024).
6.Gyuho Myeong, Wongil Shin, Kyunghwan Sung, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, Jihoon Park, Michael S. Fuhrer, Kenji Watanabe, Takashi Taniguchi, Fei Liu*, Sungjae Cho*, “Dirac-source diode with sub-unity ideality factor,” Nature Communications, 13, 4328 (2022).
7.Ligong Zhang, Yuchen Wang, Xiaoyan Liu, and Fei Liu*, "Electrical switching of spin polarized current in multiferroic tunneling junctions," npj Computational Materials 8, 197 (2022).
8.Fei Liu*, “Switching at less than 60 mV/decade with a “cold” metal as the injection source,” Physical Review Applied, 13, 064037 (2020).
9.Fei Liu*, Chenguang Qiu, Zhiyong Zhang, Lian-Mao Peng, Jian Wang, Zhenhua Wu, and Hong Guo*, “First principles simulation of energy efficient switching by source density of states engineering,” IEEE 2018 International Electron Devices Meeting (IEDM), 763, (2018).
10.Chenguang Qiu, Fei Liu, Lin Xu, Bing Deng, Mengmeng Xiao, Jia Si, Li Lin, Zhiyong Zhang*, Jian Wang, Hong Guo, Hailin Peng, and Lian-Mao Peng*, “Dirac source field-effect transistors as energy-efficient and high-performance electronic switches,” Science, 361, 387 (2018).
