研究主要集中在新原理低功耗逻辑和存储器件领域，致力于发展多尺度多物理模型模拟方法，并研究基于先进节点设计工艺的协同优化，同时探索新型的计算范式。近期主要工作：
1. Hang Zhou, Xiping Dong, Raphael Prentki, Ronggen Cao, Jian Wang, Hong Guo, and Fei Liu*, “Quantum transport simulations of sub-60 mV/decade switching of silicon cold source transistors,” IEEE Trans. Electron Devices, 71, 4 2781 (2024).
2. Ligong Zhang, Guanwen Yao, Xiaoyan Liu, and Fei Liu*, “Three-dimensional cold metals in realizing steep-slope transistors based on monolayer MoS2,” IEEE Electron Device Lett., 44,1764 (2023).
3. Gyuho Myeong, Wongil Shin, Kyunghwan Sung, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok Jin, Jihoon Park, Michael S. Fuhrer, Kenji Watanabe, Takashi Taniguchi, Fei Liu*, Sungjae Cho*, “Dirac-source diode with sub-unity ideality factor,” Nature Communications, 13, 4328 (2022).
4. Ligong Zhang, Yuchen Wang, Xiaoyan Liu, and Fei Liu*, "Electrical switching of spin polarized current in multiferroic tunneling junctions," npj Computational Materials 8, 197 (2022).
5. Zhijiang Wang, Xiaoxin Xie, Lizong Zhang, Rongen Cao, Xiaoyan Liu, Sungjae Cho*, and Fei Liu*, "Cold-source diode with sub-unity ideality factor and giant negative differential resistance," IEEE Electron Device Lett., 43, 2184-2187 (2022).
6. Fei Liu*, “Switching at less than 60 mV/decade with a “cold” metal as the injection source,” Physical Review Applied, 13, 064037 (2020).
7. Fei Liu*, Chenguang Qiu, Zhiyong Zhang, Lian-Mao Peng, Jian Wang, Zhenhua Wu, and Hong Guo*, “First principles simulation of energy efficient switching by source density of states engineering,” IEEE 2018 International Electron Devices Meeting (IEDM), 763, (2018).
8. Fei Liu*, Chenguang Qiu, Zhiyong Zhang, Lian-Mao Peng, Jian Wang, and Hong Guo, “Dirac electrons at the source: breaking the 60 mV/decade switching limit,” IEEE Transactions on Electron Devices, 65, 2736 (2018).
9. Chenguang Qiu, Fei Liu, Lin Xu, Bing Deng, Mengmeng Xiao, Jia Si, Li Lin, Zhiyong Zhang*, Jian Wang, Hong Guo, Hailin Peng, and Lian-Mao Peng*, “Dirac source field-effect transistors as energy-efficient and high-performance electronic switches,” Science, 361, 387 (2018).
Qingjun Tong, Fei Liu, Jiang Xiao, and Wang Yao*,“Skyrmions in the Moire of van der Waals 2D Magnets,”Nano Letters,18, 7194-7199 (2018).
