研制高性能超薄体场效应晶体管，实现二硫化钼高性能堆叠纳米片器件，优化高性能二硒化钨顶栅器件，研制原子层沟道堆叠互补型场效应晶体管（CFET）及集成技术，相关成果发表于2021 IEEE IEDM和2022 IEEE IEDM。研究能带设计型异质结感存算一体器件，以第一作者在Nature Electronics，Advanced Materials，Advanced Functional Materials，iScience，IEEE Electron Device Letters等期刊上发表高水平论文多篇。主持国家自然科学基金青年基金、博士后科学基金特别资助项目（结题），以技术骨干身份参与基金委重大项目、国家重点研发计划等多个科研项目。
1.Xiong Xiong et al., Top-Gate CVD WSe2 pFETs with Record-High Id~594 μA/μm, Gm~244 μS/μm and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration, IEDM 20.6.1-20.6.4 (2022)
2.Xiong Xiong et al., Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 μA/μm and MoS2/WSe2 CFET. IEDM 7.5.1-7.5.4 (2021)
3.Xiong Xiong et al., A transverse tunnelling field-effect transistor made from a van der Waals heterostructure. Nature Electronics 3 (2), 106-112 (2020)
4.Xiong Xiong et al., Nonvolatile logic and ternary content-addressable memory based on complementary black phosphorus and rhenium disulfide transistors. Advanced Materials 34, 2106321 (2021)
5.Xiong Xiong et al., Reconfigurable Logic‐in‐Memory and Multilingual Artificial Synapses Based on 2D Heterostructures. Advanced Functional Materials 30: 1909645 (2020)
6.Xiong Xiong et al., Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus. iScience 25 (3), 103947 (2022)
7.Xiong Xiong et al., High performance black phosphorus electronic and photonic devices with HfLaO dielectric. IEEE Electron Device Letters 39 (1), 127-130 (2018)
