[1] Laixiang Qin, He Tian, Chunlai Li, Yiqun Wei, Jin He, Yandong He, Tianling Ren, Zhangwei Xu, Yutao Yue；“Double channeled nanotube gate all around field effect transistor with drive current boosted, Microelectronic Engineering, 2023, Elsevier B.V.；DOI：https://doi.org/10.1016/j.mee.2024.112171.
[2] Chengyu Huang , Jinyan Wang , Maojun Wang , Jin He , etc., "Investigation of the Trap States and Vth Instability in Normally-OFF GaN MIS-FETs with LPCVD SiNx / PEALD AlN Gate Dielectric Stack and In-Situ H2/N2 Plasma Pretreatment. " IEEE Transactions on Electron Devices, TED-70, DOI:10.1109/TED.2023.3309618.
[3] X.U.Yu, H.F.Peng, R.Guo, Guoqing Hu, Jin He, and Zhengyuan Chen, "Injection-Locked Millimeter Wave Frequency Divider Utilizing Optoelectronic Oscillator Based Optical Frequency Comb"， IEEE Photonics Journal，Volume: 11, Issue:3，DOI: 10.1109/JPHOT.2019.2916919.
[4] Khawar Sarfraz, Jin He, Mansun Chan, "A 140mV Variation-Tolerant Deep Sub-Threshold SRAM in 65nm CMOS," IEEE Journal of Solid-State Circuits (IEEE JSSC),Vol: 52 No:8, pp.2215-2220，Aug.8, 2017.
[5] Mohammad Mahdi Tavakoli, Leilei Gu, Yuan Gao, Claas Reckmeier, Jin He, etc., "Fabrication of efficient planar perovskite solar cells using a one-step chemical vapor deposition method" Nature Scientific Reports, SREP-15-08034A, 2015.
[6] Lining Zhang, Jin He and Mansun Chan, “A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors”, 2012 IEEE International Electron Device Meeting (IEEE IEDM), Dec. 10-13, 2012, San Francisco, USA.
