长期从事先进集成电路器件物理与可靠性研究，具有丰富的科研与产业实践经验，在先进工艺器件可靠性与低温集成电路领域取得了一系列创新性成果。曾在华为海思从事先进逻辑工艺及三维集成技术研发工作，参与构建先进工艺可靠性评估与建模体系。以第一作者或共同第一作者在IEDM、VLSI等国际旗舰学术会议及IEEE TED等权威期刊发表多篇论文，其中IEDM 2024论文获最佳学生论文奖提名。作为科研骨干参与多项国家重点科研项目，担任Micromachines期刊客座编辑，并长期担任IEEE TED、ACM TODAES、Microelectronics Reliability等国际学术期刊审稿人。
代表性论文：
[1] Zirui Wang, Haoran Wang, Wen-Feng Li, Yuxiao Wang, Zixuan Sun, Anyi Zhu, Lang Zeng, Yueyang Liu, Runsheng Wang, Ru Huang, “Towards Understanding the Dynamic Variation in FinFET at Cryogenic Temperature: New Observations and Physical Modeling,” IEEE, IEEE International Electron Devices Meeting (IEDM), pp. 34.5.1-34.5.4, 2024. (Best Student Paper Candidate)
[2] Zirui Wang, Haoran Lu, Zixuan Sun, Cong Shen, Baokang Peng, Wen-Feng Li, Yongkang Xue, Da Wang, Zhigang Ji, Lining Zhang, Yueyang Liu, Xiangwei Jiang, Runsheng Wang, Ru Huang, “New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS,” IEEE, IEEE International Electron Devices Meeting (IEDM), pp. 16.2.1-16.2.4, 2023.
[3] Zuoyuan Dong, Zirui Wang, Hongbo Wang, Xiaomei Li, Chen Luo, Jialu Huang, Lan Li, Zepeng Huang, Zixuan Sun, Yue-Yang Liu, Xing Wu, Runsheng Wang, “Towards Understanding Cryogenic Reliability in FinFETs under Hot Carrier Stress: New Findings on Ge Migration, and Impacts of Tail States Evolution,” IEEE, IEEE Symposium on VLSI Technology and Circuits (VLSI), pp. 1-3, 2025. (共同一作)
[4] Zirui Wang, Haoran Wang, Wen-Feng Li, Yuxiao Wang, Zixuan Sun, Anyi Zhu, Lang Zeng, Yueyang Liu, Lining Zhang, Runsheng Wang, Ru Huang, “Investigation on the Band Tail States in FinFETs at Cryogenic Temperature,” IEEE, IEEE Transactions on Electron Devices (TED), vol. 72, no. 5, pp. 2670-2676, 2025.
[5] Zirui Wang, Haoran Wang, Yuxiao Wang, Zixuan Sun, Lang Zeng, Runsheng Wang, Ru Huang, “New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature,” IEEE, IEEE International Reliability Physics Symposium (IRPS), pp. 6A.3-1-6A.3-7, 2024.
